A SiGe Slot Approach for Enhancing Strain Induced Pockels Effect in the Mid-IR Range

Strained silicon was proposed more than a decade ago promising to revolutionize the photonics field by allowing efficient modulation in this platform. Despite all efforts, still rather low χ(2) values have been measured strained devices. In addition, way of applying strain has not barely changed since concept proposed, usually consisting on waveguide covered stressor material such as nitride. letter, SiGe slot approach is explored different route enhance induced Pockels effect mid-IR range. Such would allow effective index change which are near 10 -4 and improve expected for most common - nitride structure three orders magnitude.